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2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
REFRESH Command
Figure 56: Recommended Self Refresh Entry and Exit
0ms
t REFBW
t REFBW
32ms
Self refresh
Note:
1. In conjunction with a burst/pause refresh pattern.
REFRESH Requirements
1. Minimum Number of REFRESH Commands
Mobile LPDDR2 requires a minimum number, R, of REFRESH (REFab) commands with-
in any rolling refresh window ( t REFW = 32 ms @ MR4[2:0] = 011 or T C ≤ 85?C). For actual
values per density and the resulting average refresh interval ( t REFI), see Table 85
(page 141).
For t REFW and t REFI refresh multipliers at different MR4 settings, see the MR4 Device
Temperature (MA[7:0] = 04h) table.
For devices supporting per-bank REFRESH, a REFab command can be replaced by a full
cycle of eight REFpb commands.
2. Burst REFRESH Limitation
To limit current consumption, a maximum of eight REFab commands can be issued in
any rolling t REFBW ( t REFBW = 4 × 8 × t RFCab). This condition does not apply if REFpb
commands are used.
3. REFRESH Requirements and Self Refresh
If any time within a refresh window is spent in self refresh mode, the number of re-
quired REFRESH commands in that window is reduced to the following:
R′ = RU
tSRF
tREFI
= R - RU R ×
tSRF
tREFW
Where RU represents theround-up function.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
80
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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